Ultra-High Aspect Ratio InP Junctionless FinFETs by a Novel Wet Etching Method
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High work-function metals such as Ni, Pt, and Au in the form of multilayer structures, Ni/Au and Ni/Pt/Au, have been investigated as Schottky metallizations on AlGaN/GaN heterostructures under thermal annealing. As-deposited Ni/Pt/Au had slightly higher Schottky barrier height than its Ni/Au counterpart. Schottky barrier heights for Ni/Au diodes on AlGaN/GaN increased by about 20% from 1.02 eV for as-deposited to 1.21 eV after annealing at 500.